MIMMG100SR060DE 600v 100a igbt module r oh s c om plia nt fea t ures ultra lo w l o ss high r u g g e dness high s hort circuit c a p a bilit y positive t e mperatur e coe f ficient w i th fa st free-w h e e l i ng diod e s applica t ions invertor conv ertor w elder smps and ups inductio n h eating absolut e maximum ra tings t c = 25c u n less other w i se specifi e d t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s igbt v c e s v 0 0 6 e g a t l o v r e t t i m e - r o t c e l l o c v ges gate - emitter v o lt age 2 0 v i c dc col l ector c u rrent t c a 0 5 1 c 5 2 = t c a 5 0 1 c 0 8 = i c pul s pulse d col l ect o r curre nt t c = 25c, t p = 1 ms 300 a t c = 80c, t p = 1 ms 210 a p t o t w 5 2 6 t b g i r e p n o i t a p i s s i d r e w o p t j c 0 5 1 + o t 0 4 - e g n a r e r u t a r e p m e t n o i t c n u j t s t g c 5 2 1 + o t 0 4 - e g n a r e r u t a r e p m e t e g a r o t s v iso l v 0 0 0 3 n i m 1 = t , c a e g a t l o v t s e t n o i t a l u s n i free-wheeling diode v rrm v 0 0 6 e g a t l o v e s r e v e r e v i t i t e p e r i f(a v ) a vera ge fo r w a rd curre nt t c a 5 2 1 c 5 2 = t c a 5 8 c 0 8 = i f(rms) a 2 2 1 t n e r r u c d r a w r o f s m r i fsm non-repetitive surge f o r w a rd c u rre nt t j = 45c, t= 10ms, sine 500 a t j = 45c, t= 8.3 ms, sine 545 a gs series module
MIMMG100SR060DE electrical charact e r ist i cs t c = 25c unl ess other w i se specifi e d thermal and mechanica l charac t eristics s y mbol p a rame ter t est condit i o n s min. t y p. m ax. unit igbt v ge( t h ) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 250 a 3.5 5.5 v v c e (sa t ) collector - emitter saturation v o lt age i c = 100a, v g e =15v , t j = 25c 1.9 v i c = 100a, v g e =15v , t j = 125c 2.1 v i c e s coll ector l e a k age c u rrent v c e = 600v , v g e = 0 v , t j = 25c 0.5 ma v c e = 600v , v g e = 0 v , t j = 125c 3 ma i ges gate leak age current v c e = 0 v , v g e = 20v -1.1 1.1 a q g e gate charge v c c = 300 v , i c =100a , v g e = 15v 230 n c c i e s input cap a cit a nce v c e = 25v , v g e = 0 v , f =1mhz 5.3 n f c oes ou tput cap a c i t ance 0 . 5 2 n f c r e s revers e t ransfer cap a c i t anc e 0 . 3 4 n f t d ( on) t u rn - on dela y t i me v c c = 300 v , i c = 100a r g =1 0 , v g e = 15v t j = 25c inductive l o ad 4 5 ns t r s n 5 4 e m i t e s i r t d ( o f f ) s n 0 2 3 e m i t y a l e d f f o - n r u t t f s n 5 3 e m i t l l a f t d ( on) t u rn - on dela y t i me v c c = 300 v , i c = 100a r g =1 0 , v g e = 15v t j = 125c inductive l o ad 5 0 ns t r s n 5 4 e m i t e s i r t d ( o f f ) s n 0 5 3 e m i t y a l e d f f o - n r u t t f s n 0 4 e m i t l l a f e o n t u rn - on s w itc h i n g ener g y v c c = 300 v , i c = 100a t j = 25 c r g =1 0 t j = 125c v g e = 15v t j = 25 c inductive l o ad t j = 125c 3.5 mj 4.5 mj e o f f t u rn - o f f s w i tchin g ener g y 2.5 mj 3.5 mj free-wheeling diode v f f o r w ard v olt age i f = 100a , v g e =0v , t j = 25c 1 .9 2 .2 v i f = 100a , v g e =0v , t j = 125c 1.7 2.0 v t r r revers e recove r y t i me i f = 100a , v r = 400v d i f /d t= -100 0a/ s t j = 125c 5 0 ns i rrm a 5 4 t n e r r u c y r e v o c e r e s r e v e r . x a m q r r c 5 . 1 e g r a h c y r e v o c e r e s r e v e r sy mbol para mete r t est condit i o n s min. t y p. max. unit r thjc junctio n -to-ca se t hermal r e sist ance p er igb t 0.2 k / w r t hjcd junctio n -to-ca se t hermal r e sist ance per inverse d i ode 0.5 k / w t orque modu le-to-si n k recomme n d e d m6 3 5 n m t orque modu le electro des recomme n d e d m5 2.5 5 n m w eight 150 g
MIMMG100SR060DE i c (a) v c e (sa t ) v f i gure 1 . t y pic a l output charac teristics t j =125c t j =25c 300 250 200 150 100 5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 2 0 2 5 v g e v f i gure 2 . t y pic a l t ransfer char a cteristics 1 4 1 2 1 0 8 6 4 2 0 0 5 0 i c (a) 100 150 200 250 300 v ce =20v e o n e o f f ( mj ) 6 0 5 0 4 0 3 0 2 0 1 0 0 5 0 150 i c a f i gure 3 . s w i tc h i n g ener g y vs . collecto r c u rr ent v cc = 300v r g = 10ohm v g e = 15v t j =125c e o n e o f f 350 300 250 200 100 0 1 0 1 5 5 0 0 1 0 2 0 3 0 4 0 5 0 6 0 e o n e o f f ( mj ) e o n e o f f r g ohm f i gure 4 . s w itc h i n g ener g y vs. gate resistor 7 0 v cc = 300v i c =100 a v g e = 15v t j =125c t ( n s ) 100 0 100 0 3 0 9 0 i c a figure 5 . s w itc h in g t i mes vs. coll ector curr e n t v cc = 300v r g = 10ohm v g e = 15v t j =125c t d ( o f f ) 210 180 150 120 6 0 0 1 0 1 0 5 1 0 1 5 2 0 2 5 3 0 r g ohm figure6. s w itc h ing t i mes vs. gate resistor 3 5 v cc = 300v i c =100 a v g e =15v t j = 125 c t ( n s ) 100 0 100 t d ( o n ) t r t f t d ( o f f ) t d ( o n ) t f t r t j =125c t j =25c
MIMMG100SR060DE c ( n f ) v c e v f i gure 8 . t y pic a l cap a c i t anc e s vs. v c e v g e (v) q g n c f i gure 7 . ga te char ge char a c teristics 0 2 0 2 5 1 0 1 5 5 5 0 0 100 150 200 250 v g e =0v f=1mh z c ies c o e s c res 0.1 1 1 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 t c case t e mp erature( c ) f i gure1 1. rate d curre nt vs. t c i c ( a ) t j =150c v g e 15v 0 125 150 175 5 0 7 5 100 125 150 2 5 5 0 7 5 100 0 2 5 t j =25c t j = 125 c v f v f i gure 12. diode fo r w a rd c h a ra cte ri sti cs 0 0 5 0 150 200 300 250 0.5 100 1. 0 1 . 5 2.0 2.5 3 3 . 5 i f ( a ) v cc = 300v i c =100 a t j =25c 175 i c p u l s ( a ) t j =150c t c =25c v g e =15v 150 0 180 0 250 200 150 100 5 0 0 100 300 v c e v f i gure 9 . reve r se biase d sa fe opera ting are a 700 600 500 400 200 0 120 0 900 600 300 0 0 100 200 300 400 500 600 v c e v f i gure 10. shor t circuit sa fe opera ti ng are a 700 i csc ( a ) t j =150c t c =25c v g e =15v t s c 10 s 300 350
MIMMG100SR060DE dimens i o ns in mm f i gure 16. pack age outli nes 94.0 23.0 23.0 23.0 17.0 80.0 m5 29.5 30.5 8.5 17.0 6.5 4.5 4.5 2.8 x 0.5 1 2 3 4 5 6 7 34.0 z t hjc ( k/w ) rect a n gul ar pulse d u ratio n (secon ds) f i gure 13. t ransient t hermal imped ance of igbt dut y 0.5 0.2 0.1 0.05 single p ulse dut y 0.5 0.2 0.1 0.05 single p ulse 1 0 - 4 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 - 3 1 0 - 2 1 0 - 1 1 1 1 1 0 - 1 1 0 - 1 1 0 - 2 1 0 - 2 1 0 - 3 1 0 - 3 1 0 - 4 1 0 - 4 z t hjc ( k/w ) rect a n gul ar pulse d u ratio n (secon ds) f i gure 14. t ransient t hermal imped ance of diode f i gure 15. circ u it dia gram 1 2 4 3 6 7 5
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